Research Article
32 nm Gate Length FinFET: Impact of Doping
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
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| Volume 122 - Issue 6 |
| Published: July 2015 |
| Authors: Neha Somra, Ravinder Singh Sawhney |
10.5120/21703-4816
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Neha Somra, Ravinder Singh Sawhney . 32 nm Gate Length FinFET: Impact of Doping. International Journal of Computer Applications. 122, 6 (July 2015), 11-14. DOI=10.5120/21703-4816
@article{ 10.5120/21703-4816,
author = { Neha Somra,Ravinder Singh Sawhney },
title = { 32 nm Gate Length FinFET: Impact of Doping },
journal = { International Journal of Computer Applications },
year = { 2015 },
volume = { 122 },
number = { 6 },
pages = { 11-14 },
doi = { 10.5120/21703-4816 },
publisher = { Foundation of Computer Science (FCS), NY, USA }
}
%0 Journal Article
%D 2015
%A Neha Somra
%A Ravinder Singh Sawhney
%T 32 nm Gate Length FinFET: Impact of Doping%T
%J International Journal of Computer Applications
%V 122
%N 6
%P 11-14
%R 10.5120/21703-4816
%I Foundation of Computer Science (FCS), NY, USA
Abstract
FinFET, a self–aligned double-gate MOSFET structure has been agreed upon to eliminate the short channel effects. In this thesis, we report the design, fabrication and physical characteristics of n-channel FinFET with physical gate length of 32nm using visual TCAD (steady state analysis). All the measurements were performed at a supply voltage of 1. 5V and Tox=5nm. We elucidate the impact of doping concentration on the Performance of n-channel 32nm gate length FinFET at 22nm width. The drain current increases gradually when donor ion concentration in source/drain regions increases to 7e20 cm-3. Adding opposite type of source/drain impurity or decreasing acceptor ion concentration in channel further improves the performance of FinFET.
References
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