|
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
|
| Volume 71 - Issue 18 |
| Published: June 2013 |
| Authors: Zared Kamal, Qjidaa Hassan, Zouak Mohcine |
10.5120/12584-9159
|
Zared Kamal, Qjidaa Hassan, Zouak Mohcine . High PSRR Full On-Chip CMOS Low Dropout Voltage Regulator for Wireless Applications. International Journal of Computer Applications. 71, 18 (June 2013), 7-16. DOI=10.5120/12584-9159
@article{ 10.5120/12584-9159,
author = { Zared Kamal,Qjidaa Hassan,Zouak Mohcine },
title = { High PSRR Full On-Chip CMOS Low Dropout Voltage Regulator for Wireless Applications },
journal = { International Journal of Computer Applications },
year = { 2013 },
volume = { 71 },
number = { 18 },
pages = { 7-16 },
doi = { 10.5120/12584-9159 },
publisher = { Foundation of Computer Science (FCS), NY, USA }
}
%0 Journal Article
%D 2013
%A Zared Kamal
%A Qjidaa Hassan
%A Zouak Mohcine
%T High PSRR Full On-Chip CMOS Low Dropout Voltage Regulator for Wireless Applications%T
%J International Journal of Computer Applications
%V 71
%N 18
%P 7-16
%R 10.5120/12584-9159
%I Foundation of Computer Science (FCS), NY, USA
This paper presents a high PSRR full on-chip and area efficient low dropout voltage regulator (LDO), exploiting the nested miller compensation technique with active capacitor (NMCAC) to eliminate the external capacitor. A novel technique is used to boost the important characteristic for wireless applications regulators PSRR. The idea is applied to stabilize the Low dropout regulator. The proposed regulator LDO works with a supply voltage as low as 1. 8 V and provides a load current of 50 mA with a dropout voltage of 200 mV. It is designed in 0. 18 µm CMOS technology and the active area on chip measures 241×187 µm2. Simulation results show that the PSR of LDO is -60 dB at a frequency of 60 KHz and -41. 7 dB at a frequency of 1 MHz.