Research Article
Characterization of 6T SRAM Cell DRV for ULP Applications
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
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| Volume 72 - Issue 20 |
| Published: June 2013 |
| Authors: Sanjay Kr Singh, D. S. Chauhan, B. K. Kaushik, Vaibhav Dipankar, Navneet Kr. Chaurasia |
10.5120/12659-9354
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Sanjay Kr Singh, D. S. Chauhan, B. K. Kaushik, Vaibhav Dipankar, Navneet Kr. Chaurasia . Characterization of 6T SRAM Cell DRV for ULP Applications. International Journal of Computer Applications. 72, 20 (June 2013), 27-33. DOI=10.5120/12659-9354
@article{ 10.5120/12659-9354,
author = { Sanjay Kr Singh,D. S. Chauhan,B. K. Kaushik,Vaibhav Dipankar,Navneet Kr. Chaurasia },
title = { Characterization of 6T SRAM Cell DRV for ULP Applications },
journal = { International Journal of Computer Applications },
year = { 2013 },
volume = { 72 },
number = { 20 },
pages = { 27-33 },
doi = { 10.5120/12659-9354 },
publisher = { Foundation of Computer Science (FCS), NY, USA }
}
%0 Journal Article
%D 2013
%A Sanjay Kr Singh
%A D. S. Chauhan
%A B. K. Kaushik
%A Vaibhav Dipankar
%A Navneet Kr. Chaurasia
%T Characterization of 6T SRAM Cell DRV for ULP Applications%T
%J International Journal of Computer Applications
%V 72
%N 20
%P 27-33
%R 10.5120/12659-9354
%I Foundation of Computer Science (FCS), NY, USA
Abstract
This paper examines the characteristics of 6T SRAM Cell Data Retention Voltage (DRV). It also presents different DRV minimization techniques for ULP applications. The 6T SRAM cell is designed in 180nm CMOS technology. The cell is simulated to by varying different DRV dependent parameters to understand the effects on it.
References
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- Sanjay Kr Singh, Sampath Kumar, Arti Noor, D. S. Chauhan & B. K. Kaushik, Deep Sub-Micron SRAM design for DRV analysis and low leakage, International Journal of Advances in Engineering & Technology, 2011.
- Sampath Kumar, Sanjay Kr Singh, Arti Noor and B. K. Kaushik, Deep Sub-Micron SRAM Design for Low Leakage, Int'l Conf. on Computer & Communication Technology, 2010
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